Optical Pulse Compression By Solitonic Effects in - Palaiseau, France - Université Paris-Saclay GS Sciences de l'ingénierie et des systèmes

Sophie Dupont

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Sophie Dupont

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Description

Optical pulse compression by solitonic effects in silicon photonics // Optical pulse compression by solitonic effects in silicon photonics:

  • Réf
-
ABG-118164

ADUM-51858

  • Sujet de Thèse 18/11/2023
  • Université Paris-Saclay GS Sciences de l'ingénierie et des systèmes
  • Lieu de travail
  • Palaiseau
  • France
  • Intitulé du sujet
  • Optical pulse compression by solitonic effects in silicon photonics // Optical pulse compression by solitonic effects in silicon photonics
  • Mots clés silicon photonics, pulse compression, soliton, nonlinearity
- silicon photonics, pulse compression, soliton, nonlinearity
Description du sujet:

  • The exact topic of this thesis is to carry out a continuum of theoretical and applied work with a view to integrating pulsed optical sources into silicon photonics and exploring their use for generating nonlinear functions on a chip.

    The chosen approach focuses on the near-infrared spectral window where pulsed III/V semiconductor lasers (emission around 1.5μm) are available.

The approach is based on the following vision:

integrable and electrically pumped lasers, at least by hybrid integration on silicon, deliver - according to the current state of the art - optical pulses of a few picoseconds.

By favouring an ultra-low-loss waveguiding platform (SiN waveguides) and developing an original approach to the nonlinear design of waveguides and circuits using inverse design methods assisted by learning techniques (see Fig.

1), the research work will lead to the compression of the pulses generated (to sub-100fs durations) by soliton compression mechanisms [2,3] and simultaneously to the minimisation of the peak pump powers (typically 100W) required to generate cascades of nonlinear effects in the waveguides and photonic circuits.

As the intrinsic third-order nonlinearity of silicon nitride (SiN) is moderate, a hybrid integration of mono-atomic materials such as MoS2 or WS2 will also be considered (see Fig.

1) within the framework of collaborations [4].

The exact topic of this thesis is to carry out a continuum of theoretical and applied work with a view to integrating pulsed optical sources into silicon photonics and exploring their use for generating nonlinear functions on a chip.

The chosen approach focuses on the near-infrared spectral window where pulsed III/V semiconductor lasers (emission around 1.5μm) are available.

The approach is based on the following vision:

integrable and electrically pumped lasers, at least by hybrid integration on silicon, deliver - according to the current state of the art - optical pulses of a few picoseconds.

By favouring an ultra-low-loss waveguiding platform (SiN waveguides) and developing an original approach to the nonlinear design of waveguides and circuits using inverse design methods assisted by learning techniques (see Fig.

1), the research work will lead to the compression of the pulses generated (to sub-100fs durations) by soliton compression mechanisms [2,3] and simultaneously to the minimisation of the peak pump powers (typically 100W) required to generate cascades of nonlinear effects in the waveguides and photonic circuits.

As the intrinsic third-order nonlinearity of silicon nitride (SiN) is moderate, a hybrid integration of mono-atomic materials such as MoS2 or WS2 will also be considered (see Fig.

1) within the framework of collaborations [4].

Début de la thèse : 01/10/2024
Nature du financement:


Précisions sur le financement:


  • Contrats

ED :
Programme blanc GS-SIS*Programme pour normalien ENS Paris-Saclay
Présentation établissement et labo d'accueil:

  • Université Paris-Saclay GS Sciences de l'ingénierie et des systèmes
    Etablissement délivrant le doctorat:
  • Université Paris-Saclay GS Sciences de l'ingénierie et des systèmes

Ecole doctorale:

  • 575 Electrical, Optical, Bio-physics and Engineering30/05/2024

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