Ga2o3 Material and Device Studies - Lyon, France - (INSA) Institut National des Sciences Appliquees de Lyon

Description

Ga2O3 MATERIAL AND DEVICE STUDIES

• TOWARDS AN UWBG FOR POWER ELECTRONICS

:

• Réf
  ABG-122901
• Sujet de Thèse 15/04/2024
• Contrat doctoral (INSA) Institut National des Sciences Appliquees de Lyon
• Lieu de travail
• Lyon Villeurbanne
• Auvergne-RhôneAlpes
• France
• Intitulé du sujet
• Ga2O3 MATERIAL AND DEVICE STUDIES
• TOWARDS AN UWBG FOR POWER ELECTRONICS
• Champs scientifiques
• Sciences de l'ingénieur
• Electronique
• Matériaux

• Mots clés

• Ga2O3, UWBG, pdoping, deep traps, defect spectroscopy, DLTS, DLOS, power components, power conversion/switching

Description du sujet:


References:

[1] M. Orita et al., Appl. Phys. Lett

[2] N. Ueda et al., Appl. Phys. Lett

[3] E. Chikoidze, et al, J. Appl. Phys.
120

[4] J. Yang et al., _ECS J. Solid State Sci. Technol._ _
7, (2018)

[5] S. J. Pearton, et al., _J. Appl. Phys. _
124

[6] K. Tetzner e., _IEEE Electron Dev. Lett. _
40


Keywords:
Ga2O3, UWBG, p-doping, deep traps, defect spectroscopy, DLTS, DLOS, power components, power conversion/switching.


Objectives of the thesis:

The overall objective is
to characterize the properties of electrically active defects in Ga2
O3
epitaxial layers. These studies will be carried out initially to assist the GEMaC laboratory in charge of the growth of p-type material, then on vertical structures of the pin diode type in order to improve growth and technology in this sector.

Particular attention will be paid to
identifying the origin of defects in order to distinguish those due to growth from those induced by technological processes.

The study will also aim
to correlate the spectroscopy data of the defects with possible anomalous electrical characteristics of the devices.

The characterization of generation-recombination type centers will be completed by electro-optical measurements such as the lifetime of minority carriers in photocurrent and electroluminescence measurements on pin structures.

Finally,
the signatures of the traps (activation energy, capture cross section) determined can be used as injectable parameters for the modeling of the components.

Gallium oxide, thanks to its intrinsic properties and the availability of bulk substrates, is predicted to be the material of choice for next-generation high-power devices suitable for harsh environments.

The GOPOWER project, unique in France, aims to accelerate the demonstration of the exceptional potential of gallium oxide through a breakthrough in the technology of p-type materials, thus allowing France to remain highly competitive at the international level, given the considerable efforts made in research projects deployed in the United States and Japan.

Scientific breakthroughs:

Many scientific questions remain to be clarified:

• Understand the mechanisms of p doping in Ga2O3 and the associated defects.
• Interpret the fine characterization of defects (nature, structure) correlated with EPR (electronic paramagnetic resonance) measurements at the INSP.
• Set up techniques for characterizing defects on a material with a very wide band gap (4.9 eV). Indeed, the classic DLTS technique will be supplemented here by optical or electrooptical techniques such as ODLTS (Optical DLTS) and DLOS (Deep Level Optical Spectroscopy), allowing the activation and observation of very deep defects thanks to their photoionization.
• DLTS measurements under high field on pin devices.

Expected original contributions:

Obtaining p-doping in Ga2O3 will be a major step forward for the development of this sector. The characterization of this material will be a key element in obtaining it.

All these advances are essential building blocks for the development of a high power electronics industry based on Ga2O3 bipolar devices.

Prise de fonction:

• 01/10/2024
  Nature du financement:
• Contrat doctoral
  Précisions sur le financement:

Présentation établissement et labo d'accueil:

- (INSA) Institut National des Sciences Appliquees de LyonThe
INL is a 250-strong research institute based in Lyon, France, carrying out fundamental and applied research in electronics, semiconductor materials, photonics and biotechnologies. Within the INL laboratory, the "Functional Materials" team has extensive and unique expertise in electrical and electro-optical techniques for studying the electronic levels induced by traps and defects in large bandgap semiconductors. Professors Bremond and Bluet who have a more than 20 years' experience in wide band gap semiconductor physics will supervise the study.


Site web:


Intitulé du doctorat:

• Sciences physique des matériaux
  Pays d'obtention du doctorat:
• France

Etablissement délivrant le doctorat:

• INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON
  Ecole doctorale:
• École Doctorale Matériaux de LyonYou must have or be about to obtain an MSc in Condensed matter physics /Nanosci