Study of The Trap Phenomenon in Rf Gan Hemts - Rouen, France - Université de Rouen Normandie

Université de Rouen Normandie

Entreprise vérifiée

Rouen, France

il y a 2 semaines

Posté par:

Sophie Dupont

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Description

Study of the Trap Phenomenon in RF GaN HEM

Ts Transistors:

Electrical Characterization and Physical Simulation:

Réf
ABG-121548
Sujet de Thèse 21/03/2024
Contrat doctoral
Université de Rouen Normandie
Lieu de travail
Rouen
Normandie
France
Intitulé du sujet
Study of the Trap Phenomenon in RF GaN HEM

Ts Transistors:
Electrical Characterization and Physical Simulation- Champs scientifiques- Electronique

Mots clés
Reliability, GaN Transistors, Physical Simulation
Description du sujet:

The objective of this thesis is to study trap phenomena in the latest generations of Gallium Nitride (GaN)-based High Electron Mobility Transistors (HEMTs).

Various methods for characterizing trap behavior in GaN HEMTs exist, such as Deep Level Transient Spectroscopy (DLTS) for capacitance and current (C-DLTS and I-DLTS), Athermal Direct Current Transient Spectroscopy (A-DCTS), Deep Level Optical Spectroscopy (DLOS), Gate-Lag (GL) and Drain-Lag (DL) transient measurements, the study of transconductance frequency dispersion, S-parameter measurements, and low-frequency noise measurements.

The temporal and thermal ranges explored by these techniques are sometimes different, highlighting the complementarity of these measurements.

Prise de fonction:

01/10/2024
Nature du financement:
Contrat doctoral

Précisions sur le financement:

RIN ou établissement 100%
Présentation établissement et labo d'accueil:
Université de Rouen Normandie
The Group of Materials Physics
UMR CNRS 6634 (GPM, about 90 permanent) is a Mixed Research Unit (UMR) between the CNRS, the University of Rouen Normandy and the INSA of Rouen. Its research, oriented to nanosciences, concerns the transformations of diffusive phases, microelectronics, magnetic properties, the mechanics of materials and scientific instrumentation with the development notably of the Atomic Tomographic Probe, GPM's flagship instrument for 3D analysis of materials at the atomic scale.
The thesis will take place in the department «Functional materials and nanostructures» which works on the theme «Microelectronics: from material to failure». The research activities conducted in the laboratory regarding failure analysis and reliability activities are recent. They are most often based on industrial collaborations within the framework of the competitiveness pole Mov'eo or the Carnot ESP Institute. This research is most often applied to both the automotive and aerospace sectors through the study of the reliability and failure analysis of electronic components.

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Intitulé du doctorat: